The breakdown in a reverse biased \( \mathrm{p}-\mathrm{n} \) junct...
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The breakdown in a reverse biased \( \mathrm{p}-\mathrm{n} \) junction diode is more likely to occur due to
P
(a) large velocity of the minority charge carriers if the doping
W concentration is small.
(b) large velocity of the minority charge carriers if the doping concentration is large.
(c) strong electric field in a depletion region if the doping concentration is small.
(d) strong electric field in the depletion region if the doping concentration is large.
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