\( \mathrm{Ge} \) and \( \mathrm{Si} \) diodes conduct at \( 0.3 \mathrm{~V} \) and \( 0.7 \math....

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\( \mathrm{Ge} \) and \( \mathrm{Si} \) diodes conduct at \( 0.3 \mathrm{~V} \) and \( 0.7 \mathrm{~V} \) respectively. In the following figure if \( G e \) diode
\( \mathrm{P} \)
connection are reversed, the valve of \( V_{0} \) changes by
(1) \( 0.2 \mathrm{~V} \)
(2) \( 0.4 \mathrm{~V} \)
(3) \( 0.6 \mathrm{~V} \)
(4) \( 0.8 \mathrm{~V} \)


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