Duration: 2:19

1 views

0

Pure \( \mathrm{Si} \) at \( 500 \mathrm{~K} \) has equal number of electron \( \left(n_{e}\right) \) and hole \( \left(n_{h}\right) \) concentrations of \( 1.5 \times 10^{16} \mathrm{~m}^{-3} \). Doping by indium increases \( n_{h} \) to \( 4.5 \times 10^{22} \mathrm{~m}^{-3} \). The doped semiconductor is of
(a) \( \mathbf{n} \)-type with electron concentration
(b) p-type with electron concentration
\( \mathrm{n}_{\mathrm{e}}=2.5 \times 10^{10} \mathrm{~m}^{-3} \)
(c) \( \mathbf{n} \)-type with electron concentration
(d) \( \mathbf{p} \)-type having electron concentration
\[
\mathrm{n}_{\mathrm{e}}=5 \times 10^{9} \mathrm{~m}^{-3}
\]
\( \mathrm{P} \)
W
📲PW App Link - https://bit.ly/YTAI_PWAP
🌐PW Website - https://www.pw.live