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A piece of pure semicon. ductor of silicon of size \( 1 \mathrm{~cm} \times 1 \mathrm{~cm} \times 1 \mathrm{~mm} \) is having \( 5 \times 10^{28} \) number of atoms per cubic métre. It is doped, simultaneously with \( 5 \times \) \( 10^{22} \) atoms per \( \mathrm{m}^{3} \) of aresenic and \( 5 \times 10^{20} \) per \( \mathrm{m}^{3} \) atoms of indium. The number density of intrinsic current carrier (electrons and holes) in the pure silicon semiconductor is \( 1 \cdot 5 \times 10^{16} \mathrm{~m}^{-3} \). Mobility of electrons is \( 3800 \mathrm{~cm}^{2} \mathrm{~V}^{-} \mathrm{s}^{-1} \).

The conductivity of doped semiconductor (in \( \mathrm{Sm}^{-1} \) ) is
(A) \( 2 \times 10^{3} \)
(B) \( 3 \times 10^{3} \)
(C) \( 4 \times 10^{3} \)
(D) \( 1 \times 10^{3} \)
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