Assertion (A): A \( P-N \) photodiode is made from a semiconductor for which band gap \( E_{g}=2...
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Assertion (A): A \( P-N \) photodiode is made from a semiconductor for which band gap \( E_{g}=2.8 \mathrm{eV} \). This photodiode will not detect the wavelength of \( 6000 \mathrm{~nm} \).
Reason (R): A PN photodiode detect wavelength \( \lambda \) if energy of incident light, i.e., \( \frac{h c}{\lambda}E_{g} \). (Bandgap of semiconductor from which photodiode in made)
(A) Both A and R are true and R is the correct explanation of A.br(B) Both A and R are true, but R is not the correct explanation of A.
(C) A is true, but R is false.
(D) A is false, but R is true.
(E) Both A and R are false.
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