Electronics engineers successfully integrate MoS₂ transistors on a 200 mm wafer
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0Electronics engineers successfully integrate MoS₂ transistors on a 200 mm wafer
The resulting MoS2 FETs exhibit mobilities of 21 cm2 V−1 s−1, contact resistances of 3.8 kΩ µm and on-current densities of 120 µA µm−1, which are similar to those achieved with single-crystalline fakes
Junyoung Kwon Minsu Seol and their colleagues wrote.
Researchers at Samsung Advanced Institute of Technology (SAIT),, and Seoul National University recently demonstrated integration of MoS2 transistors on a 200 mm wafer
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Electronics engineers successfully integrate MoS₂ transistors on a 200 mm wafer
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The resulting MoS2 FETs exhibit mobilities of 21 cm2 V−1 s−1
contact resistances of 3.8 kΩ µm and on-current densities of 120 µA µm−1
which are similar to those achieved with single-crystalline fakes
Junyoung Kwon Minsu Seol and their colleagues wrote.
Researchers at Samsung Advanced Institute of Technology (SAIT)
demonstrated integration of MoS2 transistors on a 200 mm wafer