Poole-Frenkel Emission in MOS Structures: Voltage & Temperature Effects
0Study of Poole-Frenkel Emission Current in Metal/Oxide/Semiconductor Structures Including the Correction of the Oxide Voltage and Temperature Effects on Key Parameters
Layman's Abstract: In the world of semiconductor devices, understanding how they work and behave is essential for advancing technology. One critical component is the metal/oxide/semiconductor (MOS) structure, which is a part of almost all modern electronic devices. This study dives into how temperature affects the performance of these MOS structures by looking at current-voltage (I-V) characteristics. By considering temperature variations, the research focuses on the Poole-Frenkel (PF) conduction process, which helps explain how charge carriers move in these structures. The results show that electron traps are deeper than hole traps, and hole mobility drops significantly at higher temperatures, making p-type MOS structures less practical due to leakage currents. On the other hand, n-type MOS structures perform better at high temperatures, making them more suitable for real-world use. The study provides insights into improving MOS structures for better semiconductor technology.
#semiconductors #MOSstructures #semiconductorresearch #PooleFrenkel #electronicdevices #temperatureeffects #chargecarriertransport #semiconductorphysics #technologyadvancement #MOSdevices
Related queries-
Poole-Frenkel Emission
MOS Structures
Oxide Voltage Effect
Temperature Effect on Emission
Poole-Frenkel Current
Metal/Oxide/Semiconductor
Semiconductor Emission Current
Oxide Voltage Correction
Temperature and Voltage Effects on MOS
Key Parameters in Poole-Frenkel Emission