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Source: https://bgr.com/tech/researchers-invented-ram-thats-10000x-faster-than-what-we-have-now/
Researchers at Fudan University have developed a new experimental RAM technology called PoX, which reportedly achieves incredibly fast data writing speeds of 400 picoseconds, making it 10,000 times faster than typical laptop flash memory. Unlike traditional volatile RAM (DRAM, SRAM), PoX is non-volatile, retaining data without power, potentially leading to significant energy savings in devices like AI servers and smartphones. This breakthrough utilizes two-dimensional graphene and "super-injection" for rapid charge transfer, with AI-assisted design. While long-term performance and scalability are yet to be determined, PoX holds enormous potential to revolutionize memory technology in various applications.