Are diamonds GaN's best friend? Revolutionizing transistor technology

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Are diamonds GaN's best friend? Revolutionizing transistor technology

A research team led by Associate Professor Jianbo Liang and, Professor Naoteru Shigekawa of the, Graduate School of Engineering at Osaka Metropolitan University,has successfully fabricated GaN High Electron Mobility Transistors using, diamond as a substrate
the researchers integrated a 3C-SiC layer, a cubic polytype of silicon carbide, between GaN and diamond



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Are diamonds GaN's best friend? Revolutionizing transistor technology
Technology News
GOLAHURA
A research team led by Associate Professor Jianbo Liang and
Professor Naoteru Shigekawa of the
Graduate School of Engineering at Osaka Metropolitan University
has successfully fabricated GaN High Electron Mobility Transistors using
diamond as a substrate
the researchers integrated a 3C-SiC layer
a cubic polytype of silicon carbide
between GaN and diamond