Effect of HF Wave Frequency on N-atom Production in N2 HF Plasmas and Its Application in CN
0Effect of HF Wave Frequency on N-atom Production in N2 HF Plasmas and Its Application in CN Thin Films Deposition
Layman Abstract: This study explores how microwave and radio frequency (RF) plasmas generate nitrogen atoms, which are useful for material processing. It compares two plasma sources: one operating at 2450 MHz (microwave) and another at 13.56 MHz (RF).
Key findings include:
The 2450 MHz plasma produces a higher density of nitrogen atoms than the 13.56 MHz plasma.
The nitrogen atom density increases with power but eventually reaches a saturation point, which depends on frequency.
Higher pressures (2–8 Torr) and smaller tube diameters lead to increased nitrogen atom density.
The nitrogen-rich plasma was used in combination with laser ablation of graphite to create nitrogen-containing carbon films. Analysis showed that nitrogen incorporation in the films is enhanced at higher pressures, leading to different bonding structures.
Overall, the 2450 MHz plasma was found to be the most efficient in generating nitrogen atoms and incorporating them into materials.
View Book: https://doi.org/10.9734/bpi/mono/978-93-49473-93-5/CH21
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Related Keywords
HF Wave Frequency
N-atom Production
N2 HF Plasmas
CN Thin Films Deposition
Microwave plasmas
Surfatron
NO titration
Surface Wave (SW) plasma
CNx thin films