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expressed as
In a \( p-n \) junction, the current 1 can be
\[
\mathrm{I}=\mathrm{I}_{0}\left[e^{\frac{e \mathrm{~V}}{k \mathrm{~T}}}-1\right],
\]
where \( I_{0} \) is called the reverse saturation current, \( V \) the voltage across the diode and is positive for forward bias
- and negative for reverse bias and \( I \) is the current through the diode, \( k \) is the Boltzmann's constant \( \left(8.6 \times 10^{-5} \mathrm{eV}\right. \)
\( -\mathrm{K}^{-1} \) ) and \( \mathrm{T} \) is the absolute temperature. If for a diode, \( \mathrm{I}_{0}=5 \times 10^{-12} \mathrm{~A} \) and \( \mathrm{T}=300 \mathrm{~K} \), then
what is the dynamic resistance?
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